Address
1200 N. Martin Luther King Jr Dr.
123 Ward Hall MANHATTAN,
KS 66506-3442
Work Hours
Monday to Friday: 8AM - 5PM
Welcome to Radiation Detection Technologies, Inc.
RADIATION DETECTION TECHNOLOGIES IS DEDICATED TO WORKING WITH OUR CUSTOMERS TO IDENTIFY THEIR NEEDS AND DEVELOPING NEXT GENERATION RADIATION DETECTION AND SEMICONDUCTOR SENSORS AND DEVICES THROUGH:
- Research Driven Collaboration
- Innovation Focused Product Development
- A Customer Centered Approach To Manufacturing
Radiation Detection Technologies Applications
Precision Agriculture
Make better decisions with better data to increase yields and conserve water
Security
Feel confident in the devices that detect, identify, and locate potential threats
Medical
Technology to deliver high resolution imagery to accurately diagnose solutions
Space
Our robust sensors deliver reliable information you can trust in space radiation sensors
Non-Destructive Testing
Accurate imagery can save money and lives
Nuclear Monitoring
Our trusted sensors can be handheld, hands free, or equipped to UAVs.
What We Do
Radiation Detection Technologies has been designing and developing equipment and systems in the field of nuclear detection technology and semiconductor device technology. Another area concerns the development of electronic equipment and systems according to the specifications of our customers.
An Example of What We Do
Recent advances in etching techniques allow for increased neutron detection efficiency with our compact MSND®’s. The key components of our MSND® devices:
- Use high aspect ratio techniques to etch micro structured patterns into a semiconductor material.
- Back filling with an inert neutron conversion material, such as10B or 6LiF.
- Capturing energetic charge particles within the bulk of the micro structured semiconductor diode, as opposed to the thin film design which is limited to diode surface energetic particle capture.
These deep microstructures within the bulk of a semiconductor, combined with the neutron reactive material back fill, increases the neutron absorption efficiency, and additionally, increases the probability of registering an interaction above some lower level discriminator (LLD). However, due to the challenges associated with fabricating the MSND®, it is necessary to continue advancing processing technology beyond that of commonly used VLSI technology. In doing so, a great deal of work has been done to maximize MSND® device operational performance and optimize the MSND® fabrication process.
